In monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)

Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro

A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of synchrotron radiation, X-ray diffraction intensity mapping in reciprocal space has been measured during growth. The internal strain distribution and height of the Stranski-Krastanov islands were monitored at a temporal resolution of 9.6 s. The relaxation process of internal strain inside the Stranski-Krastanov islands displayed significant dependence on the growth temperature.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	88
Number	:	10
Pages	:	p.101917_1 - 101917_3
Publication Year/Month	:	2006/03
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Paper URL	:	https://doi.org/10.1063/1.2186106
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:53.09 Category:Physics, Applied
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Registration No. : AA20050350
JAEA Abstracts No. : 34000548
Paper Submission No. : 671

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