Initial oxidation of Si(110) as evaluated with real-time XPS

Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka ; Narita, Yuzuru*

Initial kinetics in dry oxidation of Si(110) surface, a key technology in the next-generation CMOS technology, has been investigated by using synchrotron-radiation photoemission spectroscopy. As a result, the uptake curve of the Si(110) oxide in its high-pressure-low-temperature reaction regime is found to consist of three characteristic time domains, in sharp contrast with the single domain obtained on Si(001). The difference is understood in terms of the different atomistic arrangement on the surface.