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Photoemission analysis with synchrotron radiation for nitridation of SiO$$_{2}$$ thin film on Si(001) by irradiation of N$$^{+}$$ ion beams

Teraoka, Yuden; Hachiue, Shunsuke; Yokota, Kumiko*; Tagawa, Masahito*

The mass-selected atomic nitrogen ion beams with a kinetic energy of 3 keV were irradiated at the ultra-thin silicon dio$$times$$ide overlayers on Si(001) substrates by 6.3$$times$$10$$^{15}$$ to 2.0$$times$$10$$^{16}$$ particles/cm$$^{2}$$ at room temperature. Chemical bonding states of Si, O, and N atoms were analyzed via photoemission spectroscopy using high brilliance and energy-resolution synchrotron radiation. Photoemission spectra of N-1s core level could be observed in addition to Si-2p and O-1s peaks owing to the high brilliance synchrotron radiation. It was found that the silicon dio$$times$$ide overlayer and the interface were effectively nitrided even by the dose of 10$$^{15}$$ particles/cm$$^{2}$$ order as well as the Si(001) substrate.

Language

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English

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Publication Year/Month

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Meeting title

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AVS 53rd International Symposium and Exhibition

Held date

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2006/11

Location (city)

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San Francisco

Location (country)

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U.S.A.

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Paper URL

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DOI for research data

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Link to research data related to this paper/report.

Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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神戸大学

Accesses

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- Accesses

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