Crystal nucleation behavior caused by annealing of SiC irradiated with Ne at liquid nitrogen temperature or at 573K

Aihara, Jun ; Hojo, Kiichi; Furuno, Shigemi*; Hojo, Tomohiro; Sawa, Kazuhiro; Yamamoto, Hiroyuki; Motohashi, Yoshinobu*

Silicon carbide(SiC) TEM specimens were annealed, in-situ, at 1273K for 30 minutes after amorphization with 30keV Ne $^{+}$ irradiation to the fluence of 1.9 or 2.310 $^{20}$ Ne $^{+}$ /m $^{2}$ at 573K or about 98K. The crystal nucleation and bubble coalescence accompanied by recrystallization were observed in both specimens with the annealing after the irradiations. 2.310 $^{20}$ Ne $^{+}$ /m $^{2}$ irradiations in both specimens. The Debye-Sherrer rings of the nucleated crystals well fitted the net pattern of the matrix, even though no ring corresponding to (200) of -SiC appeared. Dependence of the crystal nucleation behavior on irradiation temperature was not observed within the present experimental range.

Language	:	English
Journal	:	Materials Transactions
Volume	:	48
Number	:	7
Pages	:	p.1896 - 1900
Publication Year/Month	:	2007/07
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.2320/matertrans.MRA2007608
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:0.01 Category:Materials Science, Multidisciplinary
Altmetrics	:

Registration No. : AA20060485
JAEA Abstracts No. : 35001348
Paper Submission No. : 2935

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.