Performance recovery of proton-irradiated III-V solar cells by current injection

Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi

The performance recovery of III-V solar cells irradiated with protons by current injection was investigated. InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with 50keV protons at 110 $^{12}$ or 10MeV protons at 110 $^{10}$ ions/cm $^{2}$ at room temperature. Then, the recoveries of the electric (current-voltage: -) characteristics of these samples were investigated by forward current (minority carrier) injection. As a result, the open circuit voltage ( $V_{rm{oc}}$ ) of these 3J solar cells was recovered although no significant change in their short circuit current ( $I_{rm{sc}}$ ) was observed due to current injection. In addition, the samples irradiated with 50keV protons were recovered compared to the ones irradiated with 10MeV protons.

Language	:	English
Journal	:	Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Volume	:
Number	:
Pages	:	p.161 - 164
Publication Year/Month	:	2006/10
Meeting title	:	7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Held date	:	2006/10
Location (city)	:	Takasaki
Location (country)	:	Japan
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Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

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Registration No. : BB20062120
JAEA Abstracts No. : 34001370
Paper Submission No. : 1554

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