Performance recovery of proton-irradiated III-V solar cells by current injection

陽子線照射したIII-V族半導体太陽電池の電流注入による電気特性の回復

佐藤 真一郎; 宮本 晴基; 大島 武; 今泉 充*; 森岡 千晴*; 河野 勝泰*; 伊藤 久義

Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi

陽子線を照射したIII-V族半導体太陽電池の電流注入による特性回復を調べた。InGaP/GaAs/Ge三接合太陽電池に50keV又は10MeVの陽子線をそれぞれ110及び110ions/cmまで室温で照射したのちに同じく室温で電流注入を行い、それらの電気特性の回復を調べた。その結果、三接合太陽電池の短絡電流は回復が見られなかったが、開放電圧が回復した。また、50keV陽子線を照射した試料は10MeV陽子線を照射した試料よりも大きな回復を示すことが判明した。

The performance recovery of III-V solar cells irradiated with protons by current injection was investigated. InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with 50keV protons at 110 or 10MeV protons at 110ions/cm at room temperature. Then, the recoveries of the electric (current-voltage: -) characteristics of these samples were investigated by forward current (minority carrier) injection. As a result, the open circuit voltage () of these 3J solar cells was recovered although no significant change in their short circuit current () was observed due to current injection. In addition, the samples irradiated with 50keV protons were recovered compared to the ones irradiated with 10MeV protons.