Observation of initial oxidation on Si(110)-162 surface by scanning tunneling microscopy

Togashi, Hideaki*; Takahashi, Yuya*; Kato, Atsushi*; Konno, Atsushi*; Asaoka, Hidehito ; Suemitsu, Maki*

On Si(110) surface, the hole mobility is enhanced as compared with that on Si(001) surface. This surface is also to be used in the next-generation three-dimensional devices. We conducted scanning-tunneling-microscopy (STM) observation on the initial oxidation of Si(110)-162 surface. The present result suggests less occurrence of etching under the oxidation condition. There is a possibility to form an abrupt oxide/Si interface on the Si(110) surface.

Language	:	English
Journal	:	Japanese Journal of Applied Physics, Part 1
Volume	:	46
Number	:	5B
Pages	:	p.3239 - 3243
Publication Year/Month	:	2007/05
Meeting title	:	2006 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-06)
Held date	:	2006/11
Location (city)	:	Kawasaki
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1143/JJAP.46.3239
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20062291
JAEA Abstracts No. : 35000888
Paper Submission No. : 2446

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