Fujieda, Shinji*; Terai, Masayuki*; Saito, Motofumi*; Toda, Akio*; Miura, Yoshinao*; Liu, Z.*; Teraoka, Yuden; Yoshigoe, Akitaka 
; Wilde, M.*; Fukutani, Katsuyuki*
In order to find how bias temperature instability occurs in advanced gate stacks, we will review experimental results of our investigation on SiO
, plasma-nitrided SiON, HfSiON and HfSiON with Ni-silicide electrodes. It thus seems that we need to clarify and control the chemical and physical influences on the insulator bulk and the insulator/Si interface caused by newly incorporated materials and process technologies, in order to ensure the reliability of bias temperature instability for advanced gate stacks.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 6 |
Number |
: | 3 |
Pages |
: | p.185 - 202 |
Publication Year/Month |
: | 2007/00 |
Meeting title |
: | |
Held date |
: | 2007/05 |
Location (city) |
: | Chicago |
Location (country) |
: | U.S.A. |
Paper URL |
: |
|
Keywords |
: | no keyword |
Research Facility |
: |
Accesses |
: |
- Accesses |
|---|---|---|
Altmetrics |
: |
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