Decrease in hole concentration in Al-doped 4H-SiC by irradiation of 200 keV electrons

Matsuura, Hideharu*; Minohara, Nobumasa*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Volume	:
Number	:
Pages	:	p.181 - 184
Publication Year/Month	:	2006/10
Meeting title	:	7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7)
Held date	:	2006/10
Location (city)	:	Takasaki
Location (country)	:	Japan
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	電子加速器
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	大阪電通大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
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Registration No. : BB20062591
JAEA Abstracts No. : 35000254
Paper Submission No. : 1811

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