Real time SR-XPS on initial oxidation process at Si(110)-162 surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka ; Teraoka, Yuden

We have investigated the initial oxidation process on an Si(110)-162 surface by real time synchrotron radiation photoemission spectroscopy (SR-XPS). As a result, a rapid initial oxidation regime was found to exist on this surface, which is not present on other crystal orientations. Analyses of the O1s spectra suggest insertion of oxygen atoms at the Si-Si bonds as the predominant process during initial oxidation. The rapid initial oxidation is accompanied by decrease of the Si2p subpeak that is related to Si(110)-162 reconstruction, indicating the preferential oxidation at the pentagon pair.

Language	:	Japanese
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Meeting title	:	第12回ゲートスタック研究会; 材料・プロセス・評価の物理
Held date	:	2007/02
Location (city)	:	三島
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20062832
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