Degradation of the characteristics of SiC MOSFETs by -ray induced interface traps

Oshima, Takeshi; Hishiki, Shigeomi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

p-channel silicon carbide (SiC) metal-oxide-semiconductor field effect transisters were irradiated with -rays at dose rate of 0.878.70kGy/h at room temperature. As a result of electrical characteristics measurements, it was found that the channel mobility decreased with the density of interface traps. By thermal annealing up to 400 $^{circ}$ C, the density of interface traps generated by -rays decreases and as a result, the recovery of channel mobilty were obsereved. Threshold volatge also recovered by the thermal annealing.

Language	:	Japanese
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Meeting title	:	2007年(平成19年)春季第54回応用物理学関係連合講演会
Held date	:	2007/03
Location (city)	:	相模原
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
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Registration No. : BB20063164
JAEA Abstracts No. :
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