XPS and STM studies on initial oxidation of Si(110)-162

Suemitsu, Maki*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka ; Asaoka, Hidehito

From its high hole mobility, as well as its inevitable usage as an active layer in multi-gated FETs, Si(110) surface is expected to play a crucial role in the next generation CMOS devices. We have investigated the initial oxidation of Si(110) surface by using SR-XPS and STM. Reflecting its atomistic structure of the 162 reconstruction, initial oxidation of Si(110) surface shows a unique behavior which is not observed on other surfaces like (111) and (001).

Language	:	English
Journal	:	Materials Research Society Symposium Proceedings, Vol.996
Volume	:
Number	:
Pages	:	p.19 - 25
Publication Year/Month	:	2007/00
Meeting title	:	Materials Research Society 2007 Spring Meeting
Held date	:	2007/04
Location (city)	:	San Francisco
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1557/PROC-0996-H01-04
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20063283
JAEA Abstracts No. :
Paper Submission No. : 10883

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