Pressure effect on paramagnet -US

Ikeda, Shugo; Sakai, Hironori ; Matsuda, Tatsuma; Tateiwa, Naoyuki ; Nakamura, Akio; Yamamoto, Etsuji ; Aoki, Dai*; Homma, Yoshiya*; Shiokawa, Yoshinobu*; Hedo, Masato*; Uwatoko, Yoshiya*; Haga, Yoshinori ; Onuki, Yoshichika

Single crystals of paramagnetic semiconductor -US with the orthorhombic () crystal structure were grown by chemical transport method. We measured the electrical resistivity under high pressure, and magnetization. With increasing pressure, the temperature dependence of approaches to semimetallic behavior and a kink anomaly appears at $T_{rm a}$ . $T_{rm a}$ shifts to higher temperature with increasing pressure. From the comparison with ferromagnetic semimetal UTeS having the same crystal structure, it seems that $T_{rm a}$ is a ferromagnetic transition.

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	403
Number	:	5-9
Pages	:	p.893 - 894
Publication Year/Month	:	2008/04
Meeting title	:	International Conference on Strongly Correlated Electron Systems (SCES 2007)
Held date	:	2007/05
Location (city)	:	Houston
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.physb.2007.10.059
DOI for research data	:
Keywords	:	no keyword
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Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学; 東北大学

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Registration No. : BB20070597
JAEA Abstracts No. :
Paper Submission No. : 13422

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