Rapid initial oxidation of Si(110)-162 surface and surface reconstruction

Togashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito  ; Yoshigoe, Akitaka ; Teraoka, Yuden

Initial oxidaion processes at Si(110)-162 clean surface with O mokecules have been observed by real-time SR-XPS and STM methods. SR-XPS experiments were performed at BL23SU in SPring-8 and STM experiments were performed in JAEA Tokai research center. From comparison of oxygen uptake curves of Si(110)-162 with Si(001)-21, following conclusions were obtained. Rapid initial oxidation occured at the Si(110) surface and layer-by-layer oxidation was also took place. In-situ observation with STM revealed that the rapid initial oxidation was due to oxygen adsorption at pentagon-pair Si atoms on the topmost surface, at least 4 kinds of oxygen-adsorbed states, and the DD site was a condensed oxidation state.