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Si(110)-16$$times$$2表面の急速初期酸化現象と表面再配列

Rapid initial oxidation of Si(110)-16$$times$$2 surface and surface reconstruction

富樫 秀晃*; 山本 喜久*; 後藤 成一*; 高橋 裕也*; 中野 卓哉*; 今野 篤史*; 末光 眞希*; 朝岡 秀人 ; 吉越 章隆 ; 寺岡 有殿

Togashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; Yoshigoe, Akitaka; Teraoka, Yuden

O$$_{2}$$分子によるSi(110)-16$$times$$2清浄表面の初期酸化過程をリアルタイム放射光光電子分光法(SR-XPS)及び走査型トンネル顕微鏡(STM)により観察し、Si(110)初期酸化過程を研究した。SR-XPS実験はSPring-8-BL23SUにて、STM実験はJAEA東海で行った。Si(110)-16$$times$$2表面とSi(001)-2$$times$$1表面の酸素吸着曲線の比較から、Si(110)では急速初期酸化現象が生じることと、Layer-by-Layer成長様式を示すことを見いだした。走査トンネル顕微鏡による「その場」観察の結果、急速初期酸化現象は16$$times$$2再配列構造の構成要素であるペンタゴンペアへの酸素優先吸着に起因すること、占有/非占有状態イメージの比較から、同表面には少なくとも4種類の酸化状態が存在すること、このうちDDサイトと呼ぶ構造は凝集酸化状態であることを明らかにした。

Initial oxidaion processes at Si(110)-16$$times$$2 clean surface with O$$_{2}$$ mokecules have been observed by real-time SR-XPS and STM methods. SR-XPS experiments were performed at BL23SU in SPring-8 and STM experiments were performed in JAEA Tokai research center. From comparison of oxygen uptake curves of Si(110)-16$$times$$2 with Si(001)-2$$times$$1, following conclusions were obtained. Rapid initial oxidation occured at the Si(110) surface and layer-by-layer oxidation was also took place. In-situ observation with STM revealed that the rapid initial oxidation was due to oxygen adsorption at pentagon-pair Si atoms on the topmost surface, at least 4 kinds of oxygen-adsorbed states, and the DD site was a condensed oxidation state.

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