Real-time SR-XPS observation of the initial oxidation of Si(110)-162 and autocatalytic reaction model

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Kato, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

Ultra-thin oxide film formation processes at Si(110) surface have been studied via real-time photoemission spectroscopy with synchrotron radiation. Oxygen uptake curves were measured using integrated intensity of O1s photoemission peak. Information on oxidation schemes was obtained on the basis of the temperature dependence of the oxygen uptake curves. At oxygen pressure of 1.010 $^{-5}$ Pa, Langmuir type uptake curve was observed at 870 K whereas a sigmoidal curve was observed at 920 K. We concluded from analogies of Si(001) oxidation that randum adsorption took place at 870 K and two-demensional oxide island formation occured at 920 K.

Language	:	Japanese
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Meeting title	:	2007年秋季第68回応用物理学会学術講演会
Held date	:	2007/09
Location (city)	:	札幌
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20070958
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