Time resolved O1s and Si2p XPS for oxidation of Si(111)-77 at 300K

Yoshigoe, Akitaka ; Teraoka, Yuden

The time evolution of adsorption states was investigated by O1s and Si2p time-resolved XPS for oxidation of Si(111)-77 at 300K under the O ambient (5.310 Pa). Experiments were performed at SUREAC2000 of BL23SU in SPring-8. The O1s and Si2 XPS were measured alternatively by using synchrotron radiation (670eV, E200meV). We succeeded in observation of the close correlation of each oxidation states during the oxidation. The initial rates of Si and ins is much larger than other components. Si and Si begin increasing around the dosage of the decrement of paul. The amount of paul is almost half of a maximum value at the decrease of Si and after then the Si clearly increases and the growth rates of Si increases. The rates of decrement of Si, increment of both Si and insx2-ad become loose after the disappearance of paul. The Si decreases at increasing insx2-ad again.