Neutron transmutation doping of $^{30}$ Si enriched thin film

Yamada, Yoichi; Yamamoto, Hiroyuki; Oba, Hironori ; Sasase, Masato*; Esaka, Fumitaka ; Udono, Haruhiko*; Yamaguchi, Kenji; Yokoyama, Atsushi; Hojo, Kiichi; Shamoto, Shinichi

Neutron transmutation doping has been tried by using $^{30}$ Si enriched thin film in order to fabricate nano doping devices.

Language	:	Japanese
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Meeting title	:	2007年秋季第68回応用物理学会学術講演会
Held date	:	2007/09
Location (city)	:	札幌
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	JRR-3M(研究炉3)
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Article of JAEA R&D Review	:
Cooperating Institute	:	若狭湾エネルギー研究センター

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Registration No. : BB20071646
JAEA Abstracts No. :
Paper Submission No. :

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Neutron transmutation doping of Si enriched thin film

Neutron transmutation doping of $^{30}$ Si enriched thin film