Effects of fabrication process on the electrical characteristics of n-channel MOSFETs irradiated with gamma-rays

Hishiki, Shigeomi; Iwamoto, Naoya; Oshima, Takeshi; Ito, Hisayoshi; Kojima, Kazutoshi*; Kawano, Katsuyasu*

The n-channel 6H-SiC MOSFETs were fabricated using different process. The carbon-coated MOSFETs showed higher radiation resistance than non-coated ones. The generation of interface traps for carbon-coated MOSFETs was smaller than that for non-coated MOSFETs. This origin can be interptered in terms of the surface degradation by thermal annealing process after ion implantation.