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Report No.
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Incident kinetic energy of O$$_{2}$$ and surface temperature dependence of initial sticking probability for Si(111)-7$$times$$7 investigated by real-time XPS combined with supersonic molecular beam

Yoshigoe, Akitaka ; Teraoka, Yuden

So far, we have discussed the adsorption dynamics of O$$_{2}$$ on Si(111)-7$$times$$7 at 300K based on the incident energy dependence of initial sticking probability and saturation coverage. In this conference, the surface temperature dependence of initial sticking probability is reported. At incident energy of 0.06eV at which the precursor-mediated adsorption is dominated, the sticking probability decreases with increasing the surface temperature. This result for adsorption mechanisms is well consistent with that obtained from the incident energy dependence.

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