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Ge/Si(111)-7$$times$$7ヘテロエピタキシャル成長におけるストレスその場測定

Real-time stress measurement in Ge/Si(111)-7$$times$$7 heteroepitaxial growth

朝岡 秀人 ; 山崎 竜也; 社本 真一  ; Arnoldo, A.*; 後藤 成一*; 末光 眞希*

Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi; Arnoldo, A.*; Goto, Seiichi*; Suemitsu, Maki*

Si/Geのヘテロエピタキシャル成長において格子定数のミスマッチに起因したストレスが界面に発生し、半導体特性や、ナノドット生成に大きな影響を及ぼすため、応用の観点からも詳細なストレス遷移の理解が重要となる。われわれはSi表面上のGeヘテロ成長過程における原子層オーダーのストレス遷移と、反射高速電子回折(RHEED)法を用いた表面構造・成長形態遷移に関する同時観測を行った。その結果、1原子層未満の初期成長とともに明瞭な圧縮応力が観測され、さらには3次元ナノドットへの成長モードへのストレス・表面形態の遷移過程を詳細に捉えることに成功した。

Stress evolution during initial stage of Ge nanodot formation on Si(111)-7$$times$$7 has been investigated by using simultaneous measurements of the substrate curvature and the surface morphology. In the beginning of the first bilayer growth of Ge on Si(111)-7$$times$$7, a strong compressive film stress is observed, indicating a formation of a two-dimensional wetting layer. When the layer thickness approaches the critical one for three-dimensional nanodot nucleation, a clear bend in the stress curve is observed, corresponding to a partial relaxation of the lattice planes on the surface of the nanodots. Moreover, a stress transition has been also found to exist in the very early stage of the nanodot formation, which is concurrent with the trench formation around the three-dimensional nanodots.

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