Refine your search�ソスF     
Report No.

Real-time stress measurement in Ge/Si(111)-7$$times$$7 heteroepitaxial growth

Asaoka, Hidehito  ; Yamazaki, Tatsuya; Shamoto, Shinichi  ; Arnoldo, A.*; Goto, Seiichi*; Suemitsu, Maki*

Stress evolution during initial stage of Ge nanodot formation on Si(111)-7$$times$$7 has been investigated by using simultaneous measurements of the substrate curvature and the surface morphology. In the beginning of the first bilayer growth of Ge on Si(111)-7$$times$$7, a strong compressive film stress is observed, indicating a formation of a two-dimensional wetting layer. When the layer thickness approaches the critical one for three-dimensional nanodot nucleation, a clear bend in the stress curve is observed, corresponding to a partial relaxation of the lattice planes on the surface of the nanodots. Moreover, a stress transition has been also found to exist in the very early stage of the nanodot formation, which is concurrent with the trench formation around the three-dimensional nanodots.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.