Electronic structure of CeIrSi studied by angle-resolved resonant photoemission spectroscopy

Toshimitsu, Takafumi; Okochi, Takuo; Yasui, Akira; Kobayashi, Masaki*; Takeda, Yukiharu   ; Okane, Tetsuo  ; Saito, Yuji  ; Fujimori, Atsushi*; Yamagami, Hiroshi*; Miyauchi, Yuichiro*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika*

We performed angle-resolved resonant photoemission spectroscopy on CeIrSi. CeIrSi is said to be the superconductor which lacks inversion symmetry and therefore the measurements of electronic conductivity, magnetoresistance, dHvA, and so on, have been made on so far. In this study, we observed extremely clear 4 derived band dispersions and Fermi surfaces. By these obtained profiles and comparison with those predicted by LDA calculation, Ce 4 electrons in CeIrSi have relatively itinerant electronic states.