Effects of irradiation temperature on degradation of electrical characteristics of InGaP solar cells

Miyamoto, Haruki; Sato, Shinichiro; Oshima, Takeshi; Morioka, Chiharu*; Imaizumi, Mitsuru*; Kawano, Katsuyasu*

InGaP and Si solar cells are irradiated with 10 MeV protons at fluences up to $1 times 10^{13}$ cm $^{-2}$ at room temperature (RT) and low temperature (LT). Results show that the remaining factor Voc irradiated at LT is higher than that at RT, and vice versa for Isc. The temperature coefficient of Voc after irradiation is greater than that before irradiation, although the coefficients of Isc are the same before and after irradiation. This degradation of the output performance of these solar cells can be interpreted in terms of a decrease in minority-carrier diffusion length.

Language	:	English
Journal	:	Proceedings of 17th International Photovoltaic Science and Engineering Conference (PVSEC-17) (CD-ROM)
Volume	:
Number	:
Pages	:	p.961 - 962
Publication Year/Month	:	2007/12
Meeting title	:	17th International Photovoltaic Science and Engineering Conference (PVSEC-17)
Held date	:	2007/12
Location (city)	:	Fukuoka
Location (country)	:	Japan
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Paper URL	:
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

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Registration No. : BB20072458
JAEA Abstracts No. : 36000237
Paper Submission No. : 3572

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