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Structural study on (Al)InGaP single-junction solar cell for performance improvement of triple-junction solar cells

三接合太陽電池の特性向上を目的とした(Al)InGaP単接合太陽電池の構造解析

森岡 千晴*; 今泉 充*; 杉本 広紀*; 佐藤 真一郎; 大島 武; 田島 道夫*

Morioka, Chiharu*; Imaizumi, Mitsuru*; Sugimoto, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Tajima, Michio*

実宇宙の超高効率太陽電池開発の一環として、(Al)InGaP太陽電池の放射線耐性について調べた。ベース層の厚さは1$$mu$$mで統一し、アルミの組成比及びベース層におけるキャリア濃度を変化させたセルを作製し、3MeV陽子線を1$$times$$10$$^{14}$$cm$$^{-2}$$まで照射した。その結果、短絡電流及び開放電圧の保存率は、組成がAl$$_{0.2}$$In$$_{0.5}$$Ga$$_{0.3}$$PのセルとIn$$_{0.5}$$Ga$$_{0.5}$$Pのセルの間で有意な差がみられなかったことから、AlInGaPセルについてはベース層キャリア濃度に勾配をつけた構造は放射線耐性に有効ではないことがわかった。

Radiation resistance of (Al)InGaP solar cells was examined in this study. The epitaxial structure, such as aluminum contents or carrier concentration (CC) in the base layer, is varied, whereas the base layer thickness is maintained at 1 $$mu$$ m. The cells are irradiated with 3 MeV protons up to the fluence of $$1 times 10^{14}$$ cm$$^{-2}$$. Remaining factors of short-circuit current and open-circuit voltage show no significant difference between Al$$_{0.2}$$In$$_{0.5}$$Ga$$_{0.3}$$P and In$$_{0.5}$$Ga$$_{0.5}$$P cells. The graded CC structure in the base layer is ineffective to improve radiation resistance in the case of (Al)InGaP cells with a thick base layer, which implies that radiation degradation is not primarily attributable to the decrease in minority-carrier diffusion length.

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