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Report No.
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Atomistic nitriding processes of titanium thin films due to nitrogen-implantation

Kasukabe, Yoshitaka*; Nishida, Shinsaku*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

In order to clarify atomistic growth processes of TiN$$_{y}$$ films due to ion implantation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope at JAEA-Takasaki have been carried out, along with composition analysis and with the characterization of the electronic structure by molecular orbital calculation. The characterization of electronic structure of Ti films before and after implantation indicates that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into octahedral sites, and that the hcp-fcc transformation is induced by the shear in $$<$$010$$>$$ direction on (001) plane, promoted by the forming of $$pi$$-type covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds.

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Category:Chemistry, Physical

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