Atomistic nitriding processes of titanium thin films due to nitrogen-implantation

窒素イオン注入によるチタン薄膜の窒化過程

粕壁 善隆*; 西田 晋作*; 山本 春也; 吉川 正人; 藤野 豐*

Kasukabe, Yoshitaka*; Nishida, Shinsaku*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

本研究では、原子力機構のイオン導入型電子顕微鏡を利用して、窒素イオン注入法による窒化Ti薄膜の形成過程を透過電子顕微鏡法及び電子エネルギー損失分光法でその場観察・評価し、分子軌道計算による電子状態の評価と合わせて、窒化Ti薄膜の形成機構及び配向の制御性に関する知見を得てきた。本発表では、窒素イオン注入によるチタン薄膜の窒化過程と電子構造から考察した構造変態について発表する。

In order to clarify atomistic growth processes of TiN films due to ion implantation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope at JAEA-Takasaki have been carried out, along with composition analysis and with the characterization of the electronic structure by molecular orbital calculation. The characterization of electronic structure of Ti films before and after implantation indicates that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into octahedral sites, and that the hcp-fcc transformation is induced by the shear in 010 direction on (001) plane, promoted by the forming of -type covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds.