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Giant tunnel magnetoresistance in codeposited fullerene-cobalt films in the low bias-voltage regime

共蒸着フラーレン-コバルト薄膜の低電圧領域における巨大トンネル磁気抵抗効果

境 誠司; 菅井 勇; 三谷 誠司*; 高梨 弘毅; 松本 吉弘; 楢本 洋*; Avramov, P.; 岡安 悟 ; 前田 佳均

Sakai, Seiji; Sugai, Isamu; Mitani, Seiji*; Takanashi, Koki; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Avramov, P.; Okayasu, Satoru; Maeda, Yoshihito

Magnetotransport properties in the low bias-voltage regime were investigated for co-deposited C$$_{60}$$-Co films. A giant tunnel magnetoresistance (MR) ratio ($$Delta$$$$R$$/$$R$$$$_{max}$$) of 80%, which is the highest in ferromagnetic metal/organic molecule systems, was found at low temperatures. The observed bias-voltage dependence of the MR ratio is expressed by an unusual exponential form, suggesting that the MR ratio of nearly 100% can be realized in the low bias-voltage limit.

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パーセンタイル:73.93

分野:Physics, Applied

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