Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Son, N. T.*; Ivanov, I. G.*; Kuznetsov, A. Yu.*; Svensson, B. G.*; Zhao, Q. X.*; Willander, M.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*; Janzn, E.*; Yakimova, R.*

Defects in electron-irradiated (3, 6 MeV) ZnO substrates were investigated using optical detection of magnetic response (ODMR). The shallow donor and the Zn vacancy were detected. In addition, several ODMR centers with S= $frac{1}{2}$ were also observed. Among these, LU3 and LU4 shows a behavior as recombination centers. After annealing at 400 $^{circ}$ C, both LU3 and LU4 still remain in ZnO substrates.

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	401-402
Number	:
Pages	:	p.507 - 510
Publication Year/Month	:	2007/12
Meeting title	:	24th International Conference on Defects in Semiconductors (ICDS-24)
Held date	:	2007/07
Location (city)	:	Albuquerque
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.physb.2007.09.010
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	電子加速器
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	筑波大学

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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:17.87 Category:Physics, Condensed Matter
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Registration No. : BB20073695
JAEA Abstracts No. : 36000570
Paper Submission No. : 3834

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