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Report No.

Conceptual design about the 12-inch NTD-Si irradiation experimental device, 2; Mechanical design of irradiation experimental device for 12-inch NTD-Si ingot

Kashima, Yoichi; Yagi, Masahiro; Watanabe, Masanori; Yamamoto, Kazuyoshi

In JRR-4, a irradiation experimental device for 12 inches NTD-Si (Neutron Transmutation Doping Silicon) ingot will be installed to confirm the validity of the uniform irradiation condition which has been derived analytically in order to develop neutron irradiation technology for the large-diameter NTD-Si semiconductor to 12 inches diameter at the maximum. In installation, various limitations occurred, but some design policy was set in consideration of these limitations and the mechanical design of the irradiation experimental device was performed. As the result of mechanical design, it is possible to produce the irradiation experimental device which satisfied the irradiation condition derived by analysis without interfering it with an existing device in the future.



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