Dissociative adsorption of nitric oxide on Si(111)-(77) surface

Hashinokuchi, Michihiro*; Ito, Hironori*; Teraoka, Yuden; Moritani, Kosuke*; Okada, Michio*; Kasai, Toshio*

Dissociative adsorption of nitric oxide (NO) on Si(111)-77 surface between 330-600 K was investigated using X-ray photoelectron spectroscopy. The uptake curves of both N and O atoms as a function of NO dose revealed a prominent temperature dependence of dissociative adsorption of NO on an Si(111)-77 surface. The decrease in the rates of dissociative adsorption of NO with increasing surface temperature suggested existence of a precursor state. Additionally, the N/O ratio on the surface changed from 1.0 at 330 K to 1.2 at 600 K. This increasing N/O ratio with increasing surface temperature suggests that an additional reaction path opens at higher surface temperature.