Formation of atomically flat -FeSi $_{2}$ /Si(100) interface using ion irradiated Si substrate

Sasase, Masato*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shamoto, Shinichi

Beta iron disilicide thin film has been fabricated on Si substrate by means of ion beam sputter deposition method. By 1 keV irradiation at the fluence of 310 $^{19}$ ions/m $^{2}$ , epitaxially grown -FeSi $_{2}$ film has been obtained on Si(100) subatrate with atomically smooth interface.

Language	:	Japanese
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Meeting title	:	2008年(平成20年)春季第55回応用物理学関係連合講演会
Held date	:	2008/03
Location (city)	:	船橋
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	若狭湾エネルギー研究センター

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Registration No. : BB20073476
JAEA Abstracts No. :
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Formation of atomically flat -FeSi/Si(100) interface using ion irradiated Si substrate

Formation of atomically flat -FeSi $_{2}$ /Si(100) interface using ion irradiated Si substrate