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Report No.

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

Chen, Z. Q.*; Betsuyaku, Kiyoshi*; Kawasuso, Atsuo

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies ($$V_{rm Zn}$$) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200$$^{circ}$$C. The further annealing at 400$$^{circ}$$C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites ($$V_{rm Zn}$$-Zn$$_{rm O}$$).



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Category:Materials Science, Multidisciplinary



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