Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

Chen, Z. Q.*; Betsuyaku, Kiyoshi*; Kawasuso, Atsuo

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies ( $V_{rm Zn}$ ) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200 $^{circ}$ C. The further annealing at 400 $^{circ}$ C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites ( $V_{rm Zn}$ -Zn $_{rm O}$ ).

Language	:	English
Journal	:	Physical Review B
Volume	:	77
Number	:	11
Pages	:	p.113204_1 - 113204_4
Publication Year/Month	:	2008/03
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Paper URL	:	https://doi.org/10.1103/PhysRevB.77.113204
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Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:72.74 Category:Materials Science, Multidisciplinary
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Registration No. : AA20080013
JAEA Abstracts No. : 36000836
Paper Submission No. : 4158

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