LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi

SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.

Language	:	English
Journal	:	IEEE Transactions on Nuclear Science
Volume	:	56
Number	:	1
Pages	:	p.202 - 207
Publication Year/Month	:	2009/02
Meeting title	:	2008 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2008)
Held date	:	2008/07
Location (city)	:	Tucson
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1109/TNS.2008.2009054
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:90.64 Category:Engineering, Electrical & Electronic
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Registration No. : BB20081676
JAEA Abstracts No. :
Paper Submission No. : 7481

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