Practical method for producing a large amount of isotopically enriched silicon by infrared multi-photon dissociation of hexafluorodisilane

Oba, Hironori ; Akagi, Hiroshi; Katsumata, Keiichi*; Hashimoto, Masashi; Yokoyama, Atsushi

This paper presents a practical method for producing highly enriched silicon isotopes utilizing laser irradiation. One- or two-frequency CO $_{2}$ laser irradiation has been employed to separate the desired isotope of silicon by means of infrared multi-photon dissociation (IRMPD) of the hexafluorodisilane (Si $_{2}$ F $_{6}$ ) molecules using a flow reaction system. The production of Si $_{2}$ F $_{6}$ with $^{28}$ Si fraction of 99.1% at a rate of 0.67 g( $^{28}$ Si)/h was successfully accomplished with a high yield by the two-frequency laser irradiation. The enriched SiF $_{4}$ gas with $^{30}$ Si exceeding 31% was also continuously obtained at the production rate of 0.12 g/h by the one-frequency laser irradiation.

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	47
Number	:	11
Pages	:	p.8379 - 8381
Publication Year/Month	:	2008/11
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Paper URL	:	https://doi.org/10.1143/JJAP.47.8379
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Keywords	:	no keyword
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Registration No. : AA20080498
JAEA Abstracts No. : 37000143
Paper Submission No. : 5117

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