検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Practical method for producing a large amount of isotopically enriched silicon by infrared multi-photon dissociation of hexafluorodisilane

六フッ化二ケイ素の赤外多光子解離による同位体濃縮シリコンの大量生産の実用的手法

大場 弘則; 赤木 浩; 勝又 啓一*; 橋本 雅史; 横山 淳

Oba, Hironori; Akagi, Hiroshi; Katsumata, Keiichi*; Hashimoto, Masashi; Yokoyama, Atsushi

本論文はレーザー照射による高濃縮シリコン同位体の実用的な作製手法について述べた。フローセルを用いて、Si$$_{2}$$F$$_{6}$$分子の赤外多光子解離による同位体分離を1波長あるいは2波長の炭酸ガスレーザー照射で行った。その結果、2波長照射により$$^{28}$$Siが99.1%のSi$$_{2}$$F$$_{6}$$ガスを0.67g($$^{28}$$Si)/hの生産速度でかつ高い収率で得ることに成功した。また、1波長照射で濃縮度が31%を超える$$^{30}$$Siを含むSiF$$_{4}$$ガスを0.12g/hの生産速度で連続的に取得することができた。

This paper presents a practical method for producing highly enriched silicon isotopes utilizing laser irradiation. One- or two-frequency CO$$_{2}$$ laser irradiation has been employed to separate the desired isotope of silicon by means of infrared multi-photon dissociation (IRMPD) of the hexafluorodisilane (Si$$_{2}$$F$$_{6}$$) molecules using a flow reaction system. The production of Si$$_{2}$$F$$_{6}$$ with $$^{28}$$Si fraction of 99.1% at a rate of 0.67 g($$^{28}$$Si)/h was successfully accomplished with a high yield by the two-frequency laser irradiation. The enriched SiF$$_{4}$$ gas with $$^{30}$$Si exceeding 31% was also continuously obtained at the production rate of 0.12 g/h by the one-frequency laser irradiation.

Access

:

- Accesses

InCites™

:

パーセンタイル:20.01

分野:Physics, Applied

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.