Refine your search:     
Report No.

Change in ion beam induced current from Si metal-oxide-semiconductor capacitors after $$gamma$$-ray irradiation

Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*

Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with $$gamma$$-rays at a dose of 6.3 kGy (SiO$$_{2}$$) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to $$gamma$$-ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.5$$times$$10$$^{11}$$ and 1.7$$times$$10$$^{11}$$/cm$$^{2}$$, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after $$gamma$$-ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after $$gamma$$-ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after $$gamma$$-ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with $$gamma$$-rays can be matched to that for ones before $$gamma$$-rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to $$gamma$$-ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to $$gamma$$-ray irradiation can be interpreted in terms of positive charge generated in oxide.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.