Change in ion beam induced current from Si metal-oxide-semiconductor capacitors after -ray irradiation

Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*

Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with -rays at a dose of 6.3 kGy (SiO) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to -ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.510 and 1.710/cm, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after -ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after -ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after -ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with -rays can be matched to that for ones before -rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to -ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to -ray irradiation can be interpreted in terms of positive charge generated in oxide.