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Report No.

Defects introduced by electron-irradiation at low temperatures in SiC

Son, N. T.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Gali, A.*; Janz$'e$n, E.*

Defects introduced by electron irradiation at $$sim$$ 80-100 K in 3C-, 4H- and 6H-Silicon Carbide (SiC) were investigated by Electron Paramagnetic Resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and theoretical calculations (supercell calculation), the LE1 center in 3C-SiC with C$$_{2v}$$ symmetry and an electron spin S=3/2 could be determined to be the (V$$_{Si}$$-Si$$_{i}$$)$$^{3+}$$ Frenkel pair between the silicon vacancy and a second neighbor Si$$_{i}$$ interstitial along the $$<$$ 100 $$>$$ direction.



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