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Low temperature hetero-epitaxy of ferromagnetic silicide on Ge substrates for spin-transistor application

Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

Ferromagnetic silicide Fe$$_{3}$$Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an ordered phase and calculated to be spin-polarized at the Fermi level. In addition, the lattice constant (0.565 nm) of Fe$$_{3}$$Si is almost completely equal to that (0.565 nm) of Ge. Therefore, atomically controlled epitaxial growth of Fe$$_{3}$$Si is expected on Ge. This will be a powerful tool to realize Ge channel spin transistors with ultrahigh speed operation and ultralow power consumption. This paper reviews our recent progress in novel epitaxial growth of Fe$$_{3}$$Si on Ge for spintronics application.



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