XPS real-time monitoring on the development of Si suboxides during formation of thermal oxides on Si(110) surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si $^{3+}$ component in the Si 2p core-level spectra is always much higher than that of Si $^{4+}$ for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.

Language	:	Japanese
Journal	:	Shingaku Giho
Volume	:	108
Number	:	80
Pages	:	p.65 - 70
Publication Year/Month	:	2008/06
Meeting title	:	電子情報通信学会シリコン材料・デバイス研究会(SDM)
Held date	:	2008/06
Location (city)	:	東京
Location (country)	:	日本
Patent information	:
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DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学電気通信研究所

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Registration No. : BB20082158
JAEA Abstracts No. :
Paper Submission No. : 10871

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