Initial oxidation of Si(110) surface evaluated by photoemission spectroscopy and substrate-curvature measurements

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka ; Asaoka, Hidehito  ; Yamazaki, Tatsuya

The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O gas pressure was ranging from 5.010 Pa to 6.710 and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.