380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

Okada, Hiroshi*; Nakanishi, Yasuo*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi

To develop light emitting devices with radiation hardness, photoluminescence properties of non- and Eu-doped GaN after proton irradiation were investigated. The samples were irradiated with protons at 380 keV up to 110/cm at room temperature RT. The photoluminescence properties for the samples were measured at RT. As a results, the luminescence properties for non-doped GaN much decrease due to irradiation at 110/cm. On the other hand, for Eu-doped GaN, the luminescence properties that correspond to the transition did not show any degradation after irradiation at 110/cm.