Low threshold ablation of large bandgap LiF dielectrics induced by picosecond soft X-ray laser pulses

ピコ秒軟X線レーザーパルスによる深い禁止帯を持つLiF誘電体のアブレーションしきい値の低下

Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V.*; Khokhlov, V. A.*; 西原 功修*; 加藤 義章* ; 田中 桃子; Pikuz, T.*; 岸本 牧; 石野 雅彦; 錦野 将元; 中村 龍史; 福田 祐仁; Bulanov, S. V.; 河内 哲哉

Faenov, A. Y.; Inogamov, N. A.*; Zhakhovskii, V.*; Khokhlov, V. A.*; Nishihara, Katsunobu*; Kato, Yoshiaki*; Tanaka, Momoko; Pikuz, T.*; Kishimoto, Maki; Ishino, Masahiko; Nishikino, Masaharu; Nakamura, Tatsufumi; Fukuda, Yuji; Bulanov, S. V.; Kawachi, Tetsuya

Experimental and theoretical investigations of large bandgap LiF dielectrics ablation threshold induced by 7 ps 13.9 nm XRL pulses were performed. LiF crystal threshold is about 1600, 210 and 8 times smaller compare with LiF crystal thresholds measured previously for ns and fs visible lasers and ns 46.9 nm soft XRL, correspondently.