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Hybridization between the conduction band and 3$$d$$ orbitals in the oxide-based diluted magnetic semiconductor In$$_{2-x}$$V$$_x$$O$$_3$$

Kobayashi, Masaki*; Ishida, Yukiaki*; Hwang, J. I.*; Song, G. S.*; Takizawa, Masaru*; Fujimori, Atsushi; Takeda, Yukiharu   ; Okochi, Takuo*; Okane, Tetsuo  ; Saito, Yuji  ; Yamagami, Hiroshi; Gupta, A.*; Cao, H. T.*; Rao, K. V.*

The electronic structure of In$$_{2-x}$$V$$_x$$O$$_3$$ ($$x=0.08$$) has been investigated by photoemission spectroscopy and X-ray absorption spectroscopy (XAS). The V $$2p$$ core-level photoemission and XAS spectra revealed that the V ion is in the trivalent state, which is the same valence state as that of In in In$$_2$$O$$_3$$. The V $$3d$$ partial density of states obtained by the resonant photoemission technique showed a sharp peak above the O $$2p$$ band. While the O $$1s$$ XAS spectrum of In$$_{2-x}$$V$$_x$$O$$_3$$ was similar to that of In$$_2$$O$$_3$$, there were differences in the In $$3p$$ and $$3d$$ XAS spectra between the V-doped and pure In$$_2$$O$$_3$$. The observations give clear evidence for hybridization between the In-derived conduction band and the V $$3d$$ orbitals in In$$_{2-x}$$V$$_x$$O$$_3$$.

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Category:Materials Science, Multidisciplinary

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