Hybridization between the conduction band and 3 orbitals in the oxide-based diluted magnetic semiconductor InVO

酸化物希薄磁性半導体InVOにおける伝導バンドと3軌道の混成

小林 正起*; 石田 行章*; Hwang, J. I.*; Song, G. S.*; 滝沢 優*; 藤森 淳; 竹田 幸治   ; 大河内 拓雄*; 岡根 哲夫  ; 斎藤 祐児  ; 山上 浩志; Gupta, A.*; Cao, H. T.*; Rao, K. V.*

Kobayashi, Masaki*; Ishida, Yukiaki*; Hwang, J. I.*; Song, G. S.*; Takizawa, Masaru*; Fujimori, Atsushi; Takeda, Yukiharu; Okochi, Takuo*; Okane, Tetsuo; Saito, Yuji; Yamagami, Hiroshi; Gupta, A.*; Cao, H. T.*; Rao, K. V.*

The electronic structure of InVO () has been investigated by photoemission spectroscopy and X-ray absorption spectroscopy (XAS). The V core-level photoemission and XAS spectra revealed that the V ion is in the trivalent state, which is the same valence state as that of In in InO. The V partial density of states obtained by the resonant photoemission technique showed a sharp peak above the O band. While the O XAS spectrum of InVO was similar to that of InO, there were differences in the In and XAS spectra between the V-doped and pure InO. The observations give clear evidence for hybridization between the In-derived conduction band and the V orbitals in InVO.