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Report No.

Fabrication and characterization of high quality Al$$_{2}$$O$$_{3}$$/ZrO$$_{2}$$/GeO$$_{2}$$ layered gate dielectrics

Okamoto, Gaku*; Kutsuki, Katsuhiro*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka ; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Structure analyses and electrical characteristic tests have been conducted for a high-k/Ge stuck of Al$$_{2}$$O$$_{3}$$/ZrO$$_{2}$$/GeO$$_{2}$$/Ge structure. A ZrGeO layer and intermediate oxidation number states for Ge have been confirmed in photoemission spectra in addition to a chemically-shifted Ge$$^{4+}$$ component suggesting the growth of GeO$$_{2}$$ interface layer. An Au electrode was capped on this dielectic substrate to make an Au/Al$$_{2}$$O$$_{3}$$/ZrO$$_{2}$$/GeO$$_{2}$$/Ge capacitor. C-V measurements were conducted for the capacitor. Hysteresis was so small of 21 mV and frequency dispersion was also small. Interface state density near a mid gap, estimated by a low temperature conductance method, was 5.3$$times$$10$$^{10}$$ cm$$^{-2}$$eV$$^{-1}$$. As a conclusion, we succeeded to make a high-k/Ge stuck which has excellent interface characteristics.



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