SR-XPS analysis of SiO/SiC interfaces formed by thermal oxidation of 4H-SiC(000) surfaces

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

In order to study the origin of degradation for interface chracteristics and reliability of SiC(0001)C surfaces, chemical bonding states at SiO/SiC interfaces made on (000) and (000) surfaces have been analyzed by using a synchrotron radiation XPS method. Si2p components were extracted from Si2p photoemission peaks. Sub-oxidea components were observed in addition to the SiC substrate and the oxide layer. In the interface of the oxide layer formed on the (000) surface, Si component was small, higher oxidation number components were larger, and total amount od sub-oxides was larger comparing to that of the (000) surface. A binding energy for oxide formed on the (000) surface was shifted to 0.22 eV higher side comparing to that of the (000) surface. It indicates that band off-set of conduction band is small in the SiO/SiC interface.