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4H-SiC(000$$bar{1}$$)面の熱酸化により形成したSiO$$_{2}$$/SiC界面の放射光XPS評価

SR-XPS analysis of SiO$$_{2}$$/SiC interfaces formed by thermal oxidation of 4H-SiC(000$$bar{1}$$) surfaces

桐野 嵩史*; 景井 悠介*; 岡本 学*; Harries, J.; 吉越 章隆 ; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; 細井 卓治*; 志村 考功*; 渡部 平司*

Kirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

SiCの(000$$bar{1}$$)$$_{C}$$面の界面特性及び信頼性劣化要因の解明を目指して、(000$$bar{1}$$)$$_{Si}$$及び(000$$bar{1}$$)$$_{C}$$面に形成したSiO$$_{2}$$/SiC界面の化学結合状態を放射光XPSを用いて評価した。Si2pピークからSi2p$$_{3/2}$$成分を抽出した。SiC基板と酸化膜からの信号に加えて、価数が異なるサブオキサイド成分が観察された。(000$$bar{1}$$)$$_{C}$$面に形成した酸化膜界面では(000$$bar{1}$$)$$_{Si}$$面と比較してSi$$^{1+}$$成分は少ないが高価数成分が増大し、サブオキサイド成分の総量が多いことが明らかとなった。また(000$$bar{1}$$)$$_{C}$$面に形成した酸化膜の結合エネルギーは(000$$bar{1}$$)$$_{Si}$$面と比較して0.22eV高エネルギー側にシフトし、SiO$$_{2}$$/SiC界面での伝導帯バンドオフセットが小さいことを示唆する結果を得た。

In order to study the origin of degradation for interface chracteristics and reliability of SiC(0001)C surfaces, chemical bonding states at SiO$$_{2}$$/SiC interfaces made on (000$$bar{1}$$)$$_{Si}$$ and (000$$bar{1}$$)$$_{C}$$ surfaces have been analyzed by using a synchrotron radiation XPS method. Si2p$$_{3/2}$$ components were extracted from Si2p photoemission peaks. Sub-oxidea components were observed in addition to the SiC substrate and the oxide layer. In the interface of the oxide layer formed on the (000$$bar{1}$$)$$_{C}$$ surface, Si$$^{1+}$$ component was small, higher oxidation number components were larger, and total amount od sub-oxides was larger comparing to that of the (000$$bar{1}$$)$$_{Si}$$ surface. A binding energy for oxide formed on the (000$$bar{1}$$)$$_{C}$$ surface was shifted to 0.22 eV higher side comparing to that of the (000$$bar{1}$$)$$_{Si}$$ surface. It indicates that band off-set of conduction band is small in the SiO$$_{2}$$/SiC interface.

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