- and He-implantation or by irradiation with high-energy electronsWeidner, M.*; Trapaidze, L.*; Pensl, G.*; Reshanov, S. A.*; Sch
ner, A.*; Ito, Hisayoshi; Oshima, Takeshi; Kimoto, Tsunenobu*
Intrinsic defects in 3C-SiC generated by implantation of H and He ions or by irradiation of high energy electrons were investigated using DLTS (Deep Level Transient Spectroscopy). The defect parameters and the thermal stability of the observed defects are determined. The dominant DLTS peak was named W6-center and its capture-cross-section was directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.
Language |
: | English |
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Journal |
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Volume |
: | 645-648 |
Number |
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Pages |
: | p.439 - 442 |
Publication Year/Month |
: | 2010/00 |
Meeting title |
: | 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) |
Held date |
: | 2009/10 |
Location (city) |
: | N |
Location (country) |
: | Germany |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
: |
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