X-ray photoelectron and X-ray absorption spectroscopic study on -FeSi $_{2}$ thin films fabricated by ion beam sputter deposition

Esaka, Fumitaka ; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi ; Magara, Masaaki ; Kimura, Takaumi

A combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is applied to clarify surface chemical states of -FeSi $_{2}$ films fabricated by an ion-beam sputtering deposition method. The differences in the chemical states of the films fabricated at substrate temperatures of 873, 973 and 1173 K are investigated.

Language	:	English
Journal	:	Applied Surface Science
Volume	:	256
Number	:	10
Pages	:	p.3155 - 3159
Publication Year/Month	:	2010/03
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Paper URL	:	https://doi.org/10.1016/j.apsusc.2009.11.090
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Keywords	:	no keyword
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Article of JAEA R&D Review	:
Cooperating Institute	:	若狭湾エネルギー研究センター

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Registration No. : AA20090681
JAEA Abstracts No. : 38000703
Paper Submission No. : 7316

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X-ray photoelectron and X-ray absorption spectroscopic study on -FeSi thin films fabricated by ion beam sputter deposition

X-ray photoelectron and X-ray absorption spectroscopic study on -FeSi $_{2}$ thin films fabricated by ion beam sputter deposition